BUK952R8-30B,127 datasheet

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• Маркировка
  BUK952R8-30B,127
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BUK952R8-30B,127 Configuration: Single Continuous Drain Current: 75 A Current - Continuous Drain (id) @ 25?° C: 75A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: 30 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 89nC @ 5V Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1950488 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 300W Power Dissipation: 300000 mW Rds On (max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V Resistance Drain-source Rds (on): 0.0024 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 30 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.0024 Ohms Fall Time: 195 ns Rise Time: 222 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 260 ns Part # Aliases: BUK952R8-30B Other Names: 934057088127::BUK952R8-30B::BUK952R8-30B
• Количество страниц
  14 шт.
• Формат
  PDF

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• Размер файла
  217,30 KB

BUK952R8-30B,127 datasheet скачать

BUK952R8-30B,127 datasheet